LATERAL SOLID-PHASE EPITAXY OF AMORPHOUS SI FILMS ON SI SUBSTRATES WITH SIO2 PATTERNS

被引：64

作者：

ISHIWARA, H ^{[1
]}

YAMAMOTO, H ^{[1
]}

FURUKAWA, S ^{[1
]}

TAMURA, M ^{[1
]}

TOKUYAMA, T ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 11期

关键词：

D O I：

10.1063/1.94217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1028 / 1030

页数：3

共 7 条

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[2] SOLID-PHASE LATERAL EPITAXY OF CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON BY FURNACE ANNEALING [J].

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[3]

LAM HW, 1982, IEEE T ELECTRON DEV, V29, P389, DOI 10.1109/T-ED.1982.20713

[4] SOLID-PHASE LATERAL EPITAXIAL-GROWTH ONTO ADJACENT SIO2 FILM FROM AMORPHOUS-SILICON DEPOSITED ON SINGLE-CRYSTAL SILICON SUBSTRATE [J].

OHMURA, Y ;

MATSUSHITA, Y ;

KASHIWAGI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (03) :L152-L154

[5]

OLSON GL, 1983, 1982 P S LAS SOL INT

[6] GROWTH-CONDITIONS OF DEPOSITED SI FILMS IN SOLID-PHASE EPITAXY [J].

SAITOH, S ;

SUGII, T ;

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FURUKAWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) :L130-L132

[7] GRAIN-GROWTH OF POLYCRYSTALLINE SILICON FILMS ON SIO2 BY CW SCANNING ELECTRON-BEAM ANNEALING [J].

SHIBATA, K ;

INOUE, T ;

TAKIGAWA, T ;

YOSHII, S .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :645-647

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