AMORPHOUS-SILICON WITH SELENIUM FILMS - OPTICAL-ABSORPTION

被引：8

作者：

WAKIM, FG ^{[1
]}

ALJASSAR, A ^{[1
]}

ABONAMOUS, SA ^{[1
]}

机构：

[1] KUWAIT UNIV,KUWAIT CITY,KUWAIT

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1982年 / 53卷 / 1-2期

关键词：

D O I：

10.1016/0022-3093(82)90014-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：11 / 17

页数：7

相关论文

共 18 条

[1] DEFECTS IN AMORPHOUS-SEMICONDUCTORS
ADLER, D
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 819 - 824
[2] COMPARATIVE-STUDY OF STRUCTURE OF EVAPORATED AND GLOW-DISCHARGE SILICON
BARNA, A
BARNA, PB
RADNOCZI, G
TOTH, L
THOMAS, P
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (01): : 81 - 84
[3] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS
BRODSKY, MH
TITLE, RS
WEISER, K
PETTIT, GD
[J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &
[4] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON
CHITTICK, RC
ALEXANDE.JH
STERLING, HF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 77 - &
[5] OPTICAL CHARACTERIZATION OF AMORPHOUS-SILICON HYDRIDE FILMS
CODY, GD
WRONSKI, CR
ABELES, B
STEPHENS, RB
BROOKS, B
[J]. SOLAR CELLS, 1980, 2 (03): : 227 - 243
[6] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H
FRITZSCHE, H
[J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 447 - 501
[7] POROSITY AND OXIDATION OF AMORPHOUS SILICON FILMS PREPARED BY EVAPORATION, SPUTTERING AND PLASMA-DEPOSITION
FRITZSCHE, H
TSAI, CC
[J]. SOLAR ENERGY MATERIALS, 1979, 1 (5-6): : 471 - 479
[8] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS
KASTNER, M
ADLER, D
FRITZSCHE, H
[J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507
[9] EVIDENCE OF VOIDS WITHIN AS-DEPOSITED STRUCTURE OF GLASSY SILICON
MOSS, SC
GRACZYK, JF
[J]. PHYSICAL REVIEW LETTERS, 1969, 23 (20) : 1167 - &
[10] MOTT NF, 1979, ELECTRONIC PROPERTIE