HIGH-BRIGHTNESS BLUE AND GREEN LIGHT-EMITTING-DIODES

被引：96

作者：

EASON, DB ^{[1
]}

YU, Z ^{[1
]}

HUGHES, WC ^{[1
]}

ROLAND, WH ^{[1
]}

BONEY, C ^{[1
]}

COOK, JW ^{[1
]}

SCHETZINA, JF ^{[1
]}

CANTWELL, G ^{[1
]}

HARSCH, WC ^{[1
]}

机构：

[1] EAGLE PICHER LAB,MIAMI,OK 74354

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.113534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report high-brightness blue and green light-emitting diodes (LEDs) based on II-VI heterostructures grown by molecular beam epitaxy on ZnSe substrates. The devices consist of a 2-3 μm thick layer of n-type ZnSe:Cl, a ∼0.1 μm thick active region of Zn0.9Cd0.1Se (blue) or ZnTe0.1Se0.9 (green), and a 1.0 μm thick p-type ZnSe:N layer. The blue LEDs produce 327 μW (10 mA, 3.2 V), with the light output sharply peaked at 489 nm, and exhibit an external quantum efficiency of 1.3%. The green LEDs produce 1.3 mW (10 mA, 3.2 V) peaked at 512 nm, corresponding to an external quantum efficiency of 5.3%. In terms of photometric units, the luminous performance (luminous efficiency) of the devices is 1.6 lm/W (blue) and 17 lm/W (green), respectively, when operated at 10 mA. © 1995 American Institute of Physics.

引用

页码：115 / 117

页数：3

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