INDIUM TIN OXIDE GALLIUM-ARSENIDE SOLAR-CELLS

被引：16

作者：

NASEEM, S ^{[1
]}

COUTTS, TJ ^{[1
]}

机构：

[1] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.336255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4463 / 4464

页数：2

共 8 条

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APPLIED PHYSICS LETTERS, 1985, 46 (02) :164-166

[3]

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[5]

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[7] ROOM-TEMPERATURE ANNEALING OF RADIATION-INDUCED DEFECTS IN INP SOLAR-CELLS [J].

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ANDO, K .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1206-1208

[8] HIGH CONVERSION EFFICIENCY AND HIGH RADIATION-RESISTANCE INP HOMOJUNCTION SOLAR-CELLS [J].

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APPLIED PHYSICS LETTERS, 1984, 44 (06) :611-613

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