CURRENT-VOLTAGE CHARACTERISTICS OF AU-GAAS1-XSBX SURFACE-BARRIER STRUCTURES

被引：0
作者：
KARYAEV, VN
NAZHMUDINOV, KG
EGOROVA, MV
SAVELEV, IG
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1986年 / 20卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1025 / 1028
页数：4
相关论文
共 12 条
  • [1] BIRYULIN YF, 1983, SOV PHYS SEMICOND+, V17, P68
  • [2] BIRYULIN YF, 1981, SOV PHYS SEMICOND+, V15, P1330
  • [3] GORELENOK AT, 1984, SOV PHYS SEMICOND+, V18, P644
  • [4] HATTORI K, 1982, J APPL PHYS, V53, P6906, DOI 10.1063/1.330032
  • [5] KARYAEV VN, 1983, SOV PHYS SEMICOND+, V17, P761
  • [6] NAZHMUDINOV KG, 1986, PRIB TEKH EKSP, P33
  • [7] POLYANSKAYA TA, 1983, ELEKTRON TEKH SER, V2, P19
  • [8] RAIKH ME, 1985, SOV PHYS SEMICOND+, V19, P745
  • [9] BETTER APPROACH TO THE EVALUATION OF THE SERIES RESISTANCE OF SOLAR-CELLS
    RAJKANAN, K
    SHEWCHUN, J
    [J]. SOLID-STATE ELECTRONICS, 1979, 22 (02) : 193 - 197
  • [10] Rhoderick E.H., 1978, METAL SEMICONDUCTORS
12