ENLARGEMENT OF POLY-SI FILM GRAIN-SIZE BY EXCIMER LASER ANNEALING AND ITS APPLICATION TO HIGH-PERFORMANCE POLY-SI THIN-FILM TRANSISTOR

被引：144

作者：

KURIYAMA, H ^{[1
]}

KIYAMA, S ^{[1
]}

NOGUCHI, S ^{[1
]}

KUWAHARA, T ^{[1
]}

ISHIDA, S ^{[1
]}

NOHDA, T ^{[1
]}

SANO, K ^{[1
]}

IWATA, H ^{[1
]}

KAWATA, H ^{[1
]}

OSUMI, M ^{[1
]}

TSUDA, S ^{[1
]}

NAKANO, S ^{[1
]}

KUWANO, Y ^{[1
]}

机构：

[1] SANYO ELECT CO LTD,HIRAKATA,OSAKA 573,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

POLY-SI; EXCIMER LASER; LASER ANNEALING; GRAIN SIZE; FIELD-EFFECT MOBILITY; UNIFORMITY; SOLIDIFICATION VELOCITY;

D O I：

10.1143/JJAP.30.3700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By both numerical simulation and experimental investigation, we found it possible to enlarge the grain size (approximately 3000 angstrom) of polycrystalline silicon (poly-Si) films by excimer laser annealing, using a new method to control the solidification process of molten Si - low-temperature (less-than-or-equal-to 400-degrees-C) substrate heating during laser annealing. Poly-Si thin-film transistors (TFTs) fabricated by this new excimer laser annealing method showed a high field-effect mobility of 230 cm2/V.s, and good uniformity of field-effect mobility (+/- 10%) within the effective laser irradiation area.

引用

页码：3700 / 3703

页数：4

共 10 条

[1] LOW-TEMPERATURE CRYSTALLIZATION OF AMORPHOUS-SILICON USING AN EXCIMER LASER [J].