EXPERIMENTAL-EVIDENCE FOR A NEGATIVE-U CENTER IN GALLIUM-ARSENIDE RELATED TO OXYGEN

被引：61
作者：
ALT, HC
机构：
[1] Siemens Research Laboratories for Materials Science and Electronics, D-8000 Munich 83
来源：
PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 27期
关键词：
D O I：
10.1103/PhysRevLett.65.3421
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Fourier-transform infrared spectroscopy on the charge-state-dependent local modes of the off-center substitutional oxygen impurity in GaAs has revealed an inverted ordering of the two gap levels. The metastable one-electron state shows the characteristic disproportionation into the zero- and the two-electron states. From the thermally activated decay of the local mode lines and the observed threshold energies for the photoionization cross sections sigma-p0(1) and sigma-n0(2), binding energies of 0.15 and 0.62 eV for the first and second electron, respectively, are deduced.
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页码：3421 / 3424
页数：4
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