CHARACTERIZATION OF SI-SIO2 INTERFACE STATES IN MOS CAPACITORS BY USING DLTS TECHNIQUE

被引：0

作者：

LU, LW ^{[1
]}

GROESENDKEN, G ^{[1
]}

HASENACK, C ^{[1
]}

机构：

[1] IMEC,B-3030 LOUVAIN,BELGIUM

来源：

CHINESE PHYSICS LETTERS | 1989年 / 6卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：545 / 548

页数：4

共 50 条

[1] Characterization of Si-SiO2 interface states in MOS capacitors by using DLTS technique
Liwu, Lu
Proceedings of the Asia Pacific Physics Conference, 1991,
[2] SPIN-DEPENDENT DLTS OF SI-SIO2 INTERFACE STATES
LANG, DV
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : C351 - C351
[3] DLTS INVESTIGATIONS OF SI-SIO2 INTERFACE STATES OF ELECTRON-BEAM IRRADIATED MOS STRUCTURES
HUBNER, K
KOSTER, H
DERLICH, B
ECKE, W
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 118 (02): : K133 - K136
[4] FREQUENCY-RESPONSE OF SI-SIO2 INTERFACE STATES ON THIN OXIDE MOS CAPACITORS
EATON, DH
SAH, CT
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (01): : 95 - +
[5] CHARACTERIZATION OF SURFACE STATES AT SI-SIO2 INTERFACE USING QUASI-STATIC TECHNIQUE
FOGELS, EA
SALAMA, CAT
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (12) : 2002 - +
[6] CHARACTERIZATION OF SURFACE-STATES IN MOS CAPACITORS BY A MODIFIED DLTS TECHNIQUE
KUMAR, V
IYER, SB
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (02): : 637 - 640
[7] INTERFACE STATES IN SI-SIO2 INTERFACES
DEULING, H
KLAUSMANN, E
GOETZBERGER, A
SOLID-STATE ELECTRONICS, 1972, 15 (05) : 559 - +
[8] RECONSTRUCTING STATES AT THE SI-SIO2 INTERFACE
WHITE, CT
NGAI, KL
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1412 - 1417
[9] FAST STATES AT SI-SIO2 INTERFACE
KAWAMURA, N
IWASAKI, H
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : C216 - &
[10] IMPROVED CHARACTERIZATION OF THE SI-SIO2 INTERFACE
SU, P
SHER, A
TSUO, YH
MORIARTY, JA
MILLER, WE
APPLIED PHYSICS LETTERS, 1980, 36 (12) : 991 - 993

← 1 2 3 4 5 →