CHEMICAL-REACTION AND SCHOTTKY-BARRIER FORMATION AT V/SI INTERFACES

被引:35
作者
CLABES, JG
RUBLOFF, GW
TAN, TY
机构
来源
PHYSICAL REVIEW B | 1984年 / 29卷 / 04期
关键词
D O I
10.1103/PhysRevB.29.1540
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1540 / 1550
页数:11
相关论文
共 52 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]   CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].
ANDREWS, JM ;
PHILLIPS, JC .
PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59
[3]   SURFACE STATES ON CLEAVED (111) SILICON SURFACES [J].
ASPNES, DE ;
HANDLER, P .
SURFACE SCIENCE, 1966, 4 (04) :353-&
[4]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[5]  
BRAUN F, 1874, POGG ANN, V153, P556
[6]   CHEMICAL-REACTIONS AND LOCAL CHARGE REDISTRIBUTION AT METAL-CDS AND CDSE INTERFACES [J].
BRILLSON, LJ .
PHYSICAL REVIEW B, 1978, 18 (06) :2431-2446
[7]   TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].
BRILLSON, LJ .
PHYSICAL REVIEW LETTERS, 1978, 40 (04) :260-263
[8]   LATTICE-LOCATION EXPERIMENT OF THE NI-SI INTERFACE BY THIN-CRYSTAL CHANNELING OF HELIUM-IONS [J].
CHEUNG, NW ;
MAYER, JW .
PHYSICAL REVIEW LETTERS, 1981, 46 (10) :671-674
[9]   DETERMINATION OF SURFACE-STATES ON SI(111) BY SURFACE PHOTO-VOLTAGE SPECTROSCOPY [J].
CLABES, J ;
HENZLER, M .
PHYSICAL REVIEW B, 1980, 21 (02) :625-631
[10]   THE FORMATION OF THE SCHOTTKY-BARRIER AT THE V/SI INTERFACE [J].
CLABES, JG ;
RUBLOFF, GW ;
REIHL, B ;
PURTELL, RJ ;
HO, PS ;
ZARTNER, A ;
HIMPSEL, FJ ;
EASTMAN, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :684-687