FORMATION OF SWIRL DEFECTS IN SILICON BY AGGLOMERATION OF SELF-INTERSTITIALS

被引：140

作者：

FOLL, H

GOSELE, U

KOLBESEN, BO

机构：

[1] MAX PLANCK INST METALLFORSCH, INST PHYS, D-7000 STUTTGART 80, FED REP GER

[2] SIEMENS AG, GRUNDLAGENENTWICK HALBLEITER, D-8000 MUNCHEN 46, FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1977年 / 40卷 / 01期

关键词：

D O I：

10.1016/0022-0248(77)90034-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：90 / 108

页数：19

共 51 条

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