FORMATION OF SWIRL DEFECTS IN SILICON BY AGGLOMERATION OF SELF-INTERSTITIALS

被引：140
作者：
FOLL, H
GOSELE, U
KOLBESEN, BO
机构：
[1] MAX PLANCK INST METALLFORSCH, INST PHYS, D-7000 STUTTGART 80, FED REP GER
[2] SIEMENS AG, GRUNDLAGENENTWICK HALBLEITER, D-8000 MUNCHEN 46, FED REP GER
来源：
JOURNAL OF CRYSTAL GROWTH | 1977年 / 40卷 / 01期
关键词：
D O I：
10.1016/0022-0248(77)90034-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：90 / 108
页数：19
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