ELECTRON-TRANSPORT IN GAAS N+-P--N+ SUB-MICRON DIODES

被引：7
作者：
ADACHI, S
KAWASHIMA, M
KUMABE, K
YOKOYAMA, K
TOMIZAWA, M
机构：
来源：
ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 12期
关键词：
D O I：
10.1109/EDL.1982.25617
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：409 / 411
页数：3
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