ELECTRON-TRANSPORT IN GAAS N+-P--N+ SUB-MICRON DIODES

被引：7

作者：

ADACHI, S

KAWASHIMA, M

KUMABE, K

YOKOYAMA, K

TOMIZAWA, M

机构：

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 12期

关键词：

D O I：

10.1109/EDL.1982.25617

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：409 / 411

页数：3

共 7 条

[1] MONTE-CARLO PARTICLE SIMULATION OF GAAS SUB-MICRON N+-I-N+ DIODE [J].

AWANO, Y ;

TOMIZAWA, K ;

HASHIZUME, N ;

KAWASHIMA, M .

ELECTRONICS LETTERS, 1982, 18 (03) :133-135

[2] BALLISTIC ELECTRON MOTION IN GAAS AT ROOM-TEMPERATURE [J].

EASTMAN, LF ;

STALL, R ;

WOODARD, D ;

DANDEKAR, N ;

WOOD, CEC ;

SHUR, MS ;

BOARD, K .

ELECTRONICS LETTERS, 1980, 16 (13) :524-525

[3] MEASUREMENT OF J/V CHARACTERISTICS OF A GAAS SUB-MICRON N+-N--N+ DIODE [J].

HOLLIS, MA ;

EASTMAN, LF ;

WOOD, CEC .

ELECTRONICS LETTERS, 1982, 18 (13) :570-572

[4] IMPORTANCE OF BOUNDARY-CONDITIONS TO CONDUCTION IN SHORT SAMPLES [J].

ROSENBERG, JJ ;

YOFFA, EJ ;

NATHAN, MI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :941-944

[5]

SCHMIDT PE, 1981, ELECTRON DEVIC LETT, V2, P205

[6] GAAS N+-P--N+ BALLISTIC STRUCTURE [J].

SHUR, MS ;

EASTMAN, LF .

ELECTRONICS LETTERS, 1980, 16 (13) :522-523

[7] BALLISTIC TRANSPORT IN SEMICONDUCTOR AT LOW-TEMPERATURES FOR LOW-POWER HIGH-SPEED LOGIC [J].

SHUR, MS ;

EASTMAN, LF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1677-1683

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