EFFECTS OF THE VELOCITY SATURATED REGION ON MOSFET CHARACTERISTICS

被引：24
作者：
TAKEUCHI, K
FUKUMA, M
机构：
[1] Microelectronics Research Labs, NEC Corp.
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 09期
关键词：
D O I：
10.1109/16.310116
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple, accurate and universal relationship between MOSFET drain current in saturation, effective channel length, and gate drive has been found. It can be explained by a simple analytical model, whose validity is supported by numerical simulation. The model shows that the length of a velocity saturated region is a crucial parameter for describing MOSFET performance, particularly for short channel devices. The shrinkage of the length deteriorates the merit of channel length scaling.
引用
收藏
页码：1623 / 1627
页数：5
相关论文
共 14 条
[1]   A SEMIEMPIRICAL MODEL OF THE MOSFET INVERSION LAYER MOBILITY FOR LOW-TEMPERATURE OPERATION [J].
ARORA, ND ;
GILDENBLAT, GS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) :89-93
[2]   SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION [J].
ELMANSY, YA ;
BOOTHROYD, AR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :254-262
[3]  
KO PK, 1988, ADV MOS DEV PHYSICS, pCH1
[4]   ACCURATE 2 SECTIONS MODEL FOR MOS-TRANSISTOR IN SATURATION [J].
ROSSEL, P ;
MARTINOT, H ;
VASSILIEFF, G .
SOLID-STATE ELECTRONICS, 1976, 19 (01) :51-56
[5]  
SABNIS AG, 1979, IEDM TECH DIG, P18
[6]   LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR [J].
SCHARFETTER, DL ;
GUMMEL, HK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) :64-+
[7]   BSIM - BERKELEY SHORT-CHANNEL IGFET MODEL FOR MOS-TRANSISTORS [J].
SHEU, BJ ;
SCHARFETTER, DL ;
KO, PK ;
JENG, MC .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1987, 22 (04) :558-566
[8]   THE EFFECT OF HIGH FIELDS ON MOS DEVICE AND CIRCUIT PERFORMANCE [J].
SODINI, CG ;
KO, PK ;
MOLL, JL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) :1386-1393
[9]  
Takagi S., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P398, DOI 10.1109/IEDM.1988.32840
[10]  
TAKEUCHI K, 1991, PROCEEDINGS OF THE 1991 INTERNATIONAL CONFERENCE ON MICROELECTRON TEST STRUCTURES, P215, DOI 10.1109/ICMTS.1990.161744
12