LOW DISLOCATION DENSITY GAAS ON SI HETEROEPITAXY WITH ATOMIC-HYDROGEN IRRADIATION FOR OPTOELECTRONIC INTEGRATION

被引：48
作者：
OKADA, Y
SHIMOMURA, H
KAWABE, M
机构：
[1] Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 11期
关键词：
D O I：
10.1063/1.354029
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Basic experimental results obtained for the low-temperature molecular beam epitaxy with atomic hydrogen have been presented. GaAs films grown at different substrate temperatures have exhibited different values of dislocation densities and the average dislocation density as low as 3 X 10(4) cm-2 has been successfully obtained for the films grown at a low-temperature of 330-degrees-C with atomic hydrogen irradiation. These are among the lowest dislocation values reported to date. The surface cleaning effects and reconstruction of vicinal Si(100) surfaces during the atomic hydrogen irradiation, and also the electrical properties of epitaxial films have been investigated and analyzed: Physics behind the drastic dislocation density reduction has been investigated in detail based on the results of cross-sectional and plan-view transmission electron microscope observations and analysis of the growth kinetics.
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页码：7376 / 7384
页数：9
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