SURFACE STUDIES OF EPITAXIAL BETA-SIC ON SI(100)

被引：73
作者：
KAPLAN, R
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 06期
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D O I：
10.1063/1.334150
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：1636 / 1641
页数：6
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共 33 条
[1]   BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J].
ADDAMIANO, A ;
SPRAGUE, JA .
APPLIED PHYSICS LETTERS, 1984, 44 (05) :525-527
[2]  
ADDAMIANO A, UNPUB
[3]  
BARTNING B, 1971, OPT COMMUN, V4, P78
[4]   AUGER AND ELECTRON ENERGY-LOSS STUDY OF THE AL/SIC INTERFACE [J].
BERMUDEZ, VM .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :70-72
[5]   EARLY STAGES OF OXYGEN-ADSORPTION ON SILICON SURFACES AS SEEN BY ELECTRON-SPECTROSCOPY [J].
CARRIERE, B ;
DEVILLE, JP .
SURFACE SCIENCE, 1979, 80 (01) :278-286
[6]   SOLID-STATE REACTION OF TITANIUM AND (0001) ALPHA-SIC [J].
CHAMBERLAIN, MB .
THIN SOLID FILMS, 1980, 72 (02) :305-311
[7]   GENERAL FORMALISM FOR QUANTITATIVE AUGER ANALYSIS [J].
CHANG, CC .
SURFACE SCIENCE, 1975, 48 (01) :9-21
[8]  
DAVIS LE, 1976, HDB AUGER ELECTRON S
[9]  
DAVIS RC, 1982, 243027013 N CAR STAT
[10]   SURFACE-ANALYSIS OF DIAMONDLIKE CARBON-FILMS [J].
GREEN, AK ;
REHN, V .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (04) :1877-1879
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