PARA-CHANNEL MODULATION-DOPED FIELD-EFFECT TRANSISTORS BASED ON ALSB0.9AS0.1/GASB

被引：22
|
作者：
LUO, LF
LONGENBACH, KF
WANG, WI
机构：
[1] Department of Electrical Engineering, Columbia University, New York
来源：
IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 12期
关键词：
D O I：
10.1109/55.63042
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the successful operation of the first AlSbAs/ GaSb p-channel modulation-doped field-effect transistor. Devices with 1-μm gate length exhibit transconductances of 30 and 110 mS/mm at room temperature and 80 K, with respective maximum drain current densities of 25 and 80 mA/mm. The low field Hall mobility and sheet carrier density of this modulation doped structure are 260 cm2/V. s and 1.8 x 1012 cm-2 at room temperature and 1700 cm2/V. s and 1.4 x 1012 cm-2 at 77 K. Calculations based on these results indicate that room-temperature transconductances of 200 mS/mm or greater could be achieved. This device can be integrated with an InAs n-channel HFET for complementary circuit applications. © 1990 IEEE
引用
收藏
页码：567 / 569
页数：3
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