FORMATION OF CAVITY IN SILICON AND ITS DEFORMATION DURING HEAT-TREATMENT

被引：0
|
作者：
YOSHIHIRO, N [1 ]
NATSUAKI, N [1 ]
机构：
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 07期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：35 / 35
页数：1
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