FORMATION OF CAVITY IN SILICON AND ITS DEFORMATION DURING HEAT-TREATMENT

被引：0

作者：

YOSHIHIRO, N ^{[1
]}

NATSUAKI, N ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 07期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：35 / 35

页数：1

共 50 条

[1] EFFECT OF BORON AND PHOSPHORUS IMPURITIES ON THE FORMATION OF MICRODEFECTS DURING HEAT-TREATMENT OF SILICON
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[4] INFLUENCE OF A PRELIMINARY HEAT-TREATMENT ON THE FORMATION OF THERMAL DONORS IN SILICON
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[6] HEAT-TREATMENT DEFORMATION OF ROLLED GEARS
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[7] HEAT-TREATMENT DEFORMATION OF STEEL PRODUCTS
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[8] HEAT-TREATMENT REDUCES COMPONENT DEFORMATION
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[9] DEFORMATION-FREE HEAT-TREATMENT
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[10] Heat-treatment effects on porous silicon
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