CHARACTERIZATION OF A 4 MBIT BUBBLE MEMORY DEVICE WITH WIDE GAP PERMALLOY PROPAGATION TRACKS

被引：1
|
作者：
INOUE, H [1 ]
AMATSU, M [1 ]
YANASE, T [1 ]
MAJIMA, T [1 ]
KANEKO, Y [1 ]
ORIHARA, S [1 ]
IWASA, S [1 ]
机构：
[1] FUJITSU LTD, NAKAHARA KU, KAWASAKI 211, JAPAN
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1985年 / 21卷 / 05期
关键词：
4-MBIT BUBBLE MEMORY - ARCHITECTURAL AND FUNCTIONAL COMPATIBILITY - WIDE GAP PERMALLOY PROPAGATION TRACKS;
D O I：
10.1109/TMAG.1985.1064121
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1681 / 1683
页数：3
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