INTERFACE CAPACITANCE IN METAL-SEMICONDUCTOR JUNCTIONS

被引：61
作者：
WU, X
YANG, ES
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 09期
关键词：
D O I：
10.1063/1.342631
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：3560 / 3567
页数：8
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