PHOTOPUMPED LOW THRESHOLD ALX'GA1-X'AS-ALX'GA1-X'AS-ALXGA1-XAS(X'-APPROXIMATELY-0.85,X'-APPROXIMATELY-0.3,X=0) SINGLE QUANTUM WELL LASERS

被引：25

作者：

CAMRAS, MD

HOLONYAK, N

NIXON, MA

BURNHAM, RD

STREIFER, W

SCIFRES, DR

PAOLI, TL

LINDSTROM, C

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 09期

关键词：

D O I：

10.1063/1.94091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：761 / 763

页数：3

共 14 条

[1]

ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V4, P1573

[2] LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[3]

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[6] COHERENT (VISIBLE) LIGHT EMISSION FROM GA(AS1-XPX) JUNCTIONS [J].

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BEVACQUA, SF .

APPLIED PHYSICS LETTERS, 1962, 1 (04) :82-83

[7] QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

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KOLBAS, RM ;

DUPUIS, RD ;

DAPKUS, PD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186

[8] INDUCED DISORDER OF ALAS-ALGAAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J].

LAIDIG, WD ;

HOLONYAK, N ;

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DAPKUS, PD .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) :1-20

[9] OM-VPE GROWTH OF MG-DOPED GAAS [J].

LEWIS, CR ;

DIETZE, WT ;

LUDOWISE, MJ .

ELECTRONICS LETTERS, 1982, 18 (13) :569-570

[10] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J].

LOGAN, RA ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4172-4176

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