XANES STUDY OF STRUCTURAL DISORDER IN AMORPHOUS-SILICON

被引：22

作者：

DICICCO, A

BIANCONI, A

COLUZZA, C

RUDOLF, P

LAGARDE, P

FLANK, AM

MARCELLI, A

机构：

[1] UNIV PARIS 11,CEA,CNRS,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,MEN,F-91405 ORSAY,FRANCE

[2] IST NAZL FIS NUCL,LAB NAZL FRASCATI,I-00044 FRASATI,ITALY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1990年 / 116卷 / 01期

关键词：

24;

D O I：

10.1016/0022-3093(90)91041-O

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An investigation of the structure of several amorphous silicon (a-Si) films is presented. Samples were prepared by using the ion beam sputtering technique at different substrate deposition temperatures. X-ray absorption spectroscopy and multiple scattering formalism have been used to detect structural variations of the a-Si films. The analysis of the XANES (X-ray absorption near-edge structure) spectra shows that increasing the substrate deposition temperature leads to a structural change toward a higher-level short-range order. © 1990.

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页码：27 / 32

页数：6

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