GAAS SINGLE-DRIFT FLAT-PROFILE IMPATT DIODES FOR CW OPERATION AT D-BAND

被引：14

作者：

EISELE, H

HADDAD, GI

机构：

[1] Solid-State Electronics Laboratory, Department of Electrical Engineering & Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 23期

关键词：

DIODES; SEMICONDUCTOR DEVICES; MICROWAVE DEVICES;

D O I：

10.1049/el:19921396

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single-drift flat-profile GaAs IMPATT diodes were designed for CW operation in the 140 GHz range. The diodes were fabricated from MBE grown material, mounted on diamond heatsinks and tested in a radial line full height waveguide cavity. An RF output power of 15 mW with a corresponding DC to RF conversion efficiency of 1.5% was obtained at 135.3 GHz.

引用

页码：2176 / 2177

页数：2

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