SPACE-CHARGE-LIMITED CURRENT OF HOLES IN SILICON AND TECHNIQUES FOR DISTINGUISHING DOUBLE AND SINGLE INJECTION

被引：28

作者：

MARSH, OJ

VISWANAT.CR

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来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 08期

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D O I：

10.1063/1.1710077

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：3135 / &

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