PROPERTIES OF LIQUID-PHASE EPITAXIAL GAAS GROWN FROM TIN SOLUTION

被引：5
作者：
NEUMANN, H
JACOBS, K
REPPIN, R
BUTTER, E
SOBOTTA, H
STAUDTE, M
机构：
[1] KARL MARX UNIV,SEKT PHYS,LEIPZIG,GER DEM REP
[2] KARL MARX UNIV,SEKT CHEM,LEIPZIG,GER DEM REP
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 32卷 / 02期
关键词：
D O I：
10.1002/pssa.2210320219
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：497 / 502
页数：6
相关论文
共 26 条
[1]   ELECTRICAL AND X-RAY INVESTIGATION OF TIN IN GALLIUM ARSENIDE [J].
AOKI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (10) :1248-&
[2]   INCORPORATION OF SN AND TE IN GAAS AND INXGA1-XAS FILMS GROWN FROM SOLUTION [J].
BOLKHOVITYANOV, YB ;
BOLKHOVITYANOVA, RI .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 27 (02) :673-678
[3]   INVESTIGATION OF DOPING PROFILES AND INCORPORATION OF SN AND TE IN GAAS AND INXGA1-XAS FILMS GROWN FROM THIN SOLUTION LAYER [J].
BOLKHOVITYANOV, YB ;
BOLKHOVITYANOVA, RI ;
ZEMBATOV, NB ;
MARCHENKO, NE .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 22 (01) :349-355
[4]  
BOLKHOVITYANOV YB, 1975, PROCESSI ROSTA SINTE, P285
[5]  
BOLKHOVITYNAOV YB, 1972, IAN SSSR NEORG MATER, V8, P1039
[6]   EMISSION SPECTROGRAPHIC DETERMINATION OF GERMANIUM AND TIN IN GALLIUM-ARSENIDE [J].
DITTRICH, K ;
ROSSLER, H .
TALANTA, 1973, 20 (09) :897-902
[7]  
FRIEDEL J, 1974, PROBLEME FESTKORPERE, V6
[8]  
JACOBS KC, TO BE PUBLISHED
[9]  
KANG CS, 1968, S GAAS DALLAS, P18
[10]  
KOLM C, 1964, PHYS REV, V109, P965
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