PHYSICAL-PROPERTIES OF UNDOPED AND DOPED HYDROGENATED AMORPHOUS-SILICON CARBIDE

被引：21
作者：
DEMICHELIS, F
PIRRI, CF
TRESSO, E
DELLAMEA, G
RIGATO, V
RAVA, P
机构：
[1] CONSORZIO INFM, PADUA, ITALY
[2] UNIV TRENTO, I-38050 TRENT, ITALY
[3] ELETTRORAVA SPA, TURIN, ITALY
[4] UNIV PADUA, DIPARTIMENTO FIS, I-35100 PADUA, ITALY
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 12期
关键词：
D O I：
10.1088/0268-1242/6/12/007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A systematic study on the basic characteristics of p-type a-SiC:H films doped with B2H6 and n-type doped with PH3 is presented. The effect of doping on the optical and electrical properties of the films has been examined. The results obtained on energy gap, spin density, Urbach energy and integral of excess absorption suggest that the phosphorus dopant atoms introduce fewer additional defects than does boron. The difference in the behaviour of the two types of doping has been attributed to the chemistry of boron and phosphorus.
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页码：1141 / 1146
页数：6
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