ELECTRICAL-CONDUCTIVITY OF DISORDERED LAYERS IN GAAS CRYSTAL PRODUCED BY ION-IMPLANTATION

被引：63

作者：

KATO, Y ^{[1
]}

SHIMADA, T ^{[1
]}

SHIRAKI, Y ^{[1
]}

KOMATSUB.KF ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 03期

关键词：

D O I：

10.1063/1.1663366

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1044 / 1049

页数：6

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