YBA2CU3O7-X TO SI INTERCONNECTION FOR HYBRID SUPERCONDUCTOR SEMICONDUCTOR INTEGRATION

We have successfully made low resistance contacts between high-quality films of YBa2Cu3O7-x (YBCO) and single-crystal Si substrates through Ag-Au interconnections. The YBCO films were deposited by laser ablation on an epitaxial yttria-stabilized zirconia buffer layer on Si and had zero-resistance critical temperatures of 83-85 K after patterning into lines. Specific contact resistivities (resistance-area products) of the YBCO to Si interconnection, limited by the Au to Si interface, of 10(-6) OMEGA cm2 were achieved on heavily doped Si after deposition and patterning of the YBCO film. This demonstrates the use of high-temperature superconductors as a wiring layer compatible with conventional Si metal-oxide-semiconductor processing.