MICROSTRUCTURE OF CUINS2 FILMS PREPARED BY SULFURATION OF CU-IN-O FILMS

Polycrystalline CuInS2 thin films are prepared by sulfuration of Cu-In-0 films. The Cu-In-0 films are deposited from a sintered Cu2In2O5 target by using a pulsed laser deposition (PLD) method. Then, the Cu-In-0 films are converted into CuInS2 films by means of a subsequent annealing in an H2S gas atmosphere. The characteristics of the films are determined by using an x-ray diffractometer (XRD), an energy dispersive x-ray spectrometer (EDX), and a scanning electron microscope (SEM). The effects of the deposition and sulfuration temperatures of the Cu-In-0 films on the structural and microstructural properties of CuInS2 films arc examined experimentally. Single-phase CuInS2 films with a chalcopyrite structure are obtained when Cu-In-6 films are sulfurated at a temperature higher than 400-degrees-C. Grain size of CuInS2 is larger when a lower deposition temperature and a higher sulfuration temperature of Cu-In-O films are employed.