ALIGNMENT AND REGISTRATION SCHEMES FOR PROJECTION ELECTRON LITHOGRAPHY

被引：7

作者：

FARROW, RC

BERGER, SD

GIBSON, JM

LIDDLE, JA

KRAUS, JS

CAMARDA, RM

HUGGINS, HA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 06期

关键词：

D O I：

10.1116/1.585849

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Techniques for doing alignment and registration in projection electron lithography are reviewed. The issues associated with extending these techniques to the case of high incident electron energy exposure are discussed. Measurements of backscatter electron emission contrast from W markers on Si wafers at 200 kV show that mark detection within the expected range of voltages is feasible.

引用

页码：3582 / 3585

页数：4

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