MEASUREMENT OF ATOMIC INDIUM DURING METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：12

作者：

HEBNER, GA

KILLEEN, KP

机构：

[1] Sandia National Laboratories, Albuquerque, NM 87185

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 03期

关键词：

D O I：

10.1063/1.345644

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic indium, produced by the pyrolysis of trimethylindium (TMIn) during metalorganic chemical vapor deposition, has been directly observed using resonant fluorescence spectroscopy. The indium fluorescence signal is linear with TMIn flow rate at a susceptor temperature of 500 °C above a small background threshold level. The threshold for the observation of an indium signal is 325 °C. Addition of trimethylantimony (TMSb) at concentrations less than those required for normal InSb epitaxial growth results in quenching of the indium signal.

引用

页码：1598 / 1600

页数：3

共 11 条

[1]

Gray D.E., 1972, AM I PHYS HDB, V3rd, P4

[2] THE MECHANISM OF THE GROWTH OF INP BY MOCVD - AN INVESTIGATION OF THE PYROLYSES OF SOME GROUP-III METAL-ORGANICS [J].