LOW-NOISE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR MADE BY ION-IMPLANTATION

被引：13
作者：
FENG, M
EU, VK
KANBER, H
WATKINS, E
SCHELLENBERG, JM
YAMASAKI, H
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 09期
关键词：
D O I：
10.1063/1.93265
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：802 / 804
页数：3
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