N-FET, A NEW SOFTWARE TOOL FOR LARGE-SIGNAL GAAS-FET CIRCUIT-DESIGN

被引:0
作者
CURTICE, WR [1 ]
ETTENBERG, M [1 ]
机构
[1] CUNY CITY COLL,NEW YORK,NY 10031
来源
RCA REVIEW | 1985年 / 46卷 / 03期
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:321 / 340
页数:20
相关论文
共 18 条
[3]   SELF-CONSISTENT GAAS-FET MODELS FOR AMPLIFIER DESIGN AND DEVICE DIAGNOSTICS [J].
CURTICE, WR ;
CAMISA, RL .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (12) :1573-1579
[4]   A TEMPERATURE MODEL FOR THE GAAS-MESFET [J].
CURTICE, WR ;
YUN, YH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :954-962
[5]  
CURTICE WR, 1985, UNPUB IEEE T MICROWA, V33
[6]  
DAVIS C, 1975, RCA ENG, V21, P66
[7]   DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET [J].
FUKUI, H .
BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03) :771-797
[8]  
GILMORE RJ, 1984, IEEE P MTT S, P430
[9]  
GOLIO JM, 1985, IEEE T MICROW THEORY, P417
[10]  
KU WH, 1977, IEEE MTT S INT MICRO, P312