GROWTH-KINETICS AND GROWTH MECHANISMS FOR DISILICIDE LAYERS OBTAINED THROUGH IMPLANTATION

被引：16
作者：
DHEURLE, FM
PETERSSON, CS
TSAI, MY
机构：
[1] IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, United States
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 12期
关键词：
Compendex;
D O I：
10.1063/1.330478
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
42
引用
收藏
页码：8765 / 8770
页数：6
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