IMPURITY ENHANCEMENT OF THE 1.54-MU-M ER3+ LUMINESCENCE IN SILICON

被引：383
作者：
MICHEL, J
BENTON, JL
FERRANTE, RF
JACOBSON, DC
EAGLESHAM, DJ
FITZGERALD, EA
XIE, YH
POATE, JM
KIMERLING, LC
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
[2] USN ACAD,DEPT CHEM,ANNAPOLIS,MD 21402
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 05期
关键词：
D O I：
10.1063/1.349382
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of impurity coimplantation in MeV erbium-implanted silicon is studied. A significant increase in the intensity of the 1.54-mu-m Er3+ emission was observed for different coimplants. This study shows that the Er3+ emission is observed if erbium can form an impurity complex in silicon. The influence of these impurities on the Er3+ photoluminescence spectrum is demonstrated. Furthermore we show the first room-temperature photoluminescence spectrum of erbium in crystalline silicon.
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页码：2672 / 2678
页数：7
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