GROWTH TEMPERATURE-DEPENDENCE OF INTERFACIAL ABRUPTNESS IN SI/GE HETEROEPITAXY STUDIED BY RAMAN-SPECTROSCOPY AND MEDIUM ENERGY ION-SCATTERING

被引：131
作者：
IYER, SS
TSANG, JC
COPEL, MW
PUKITE, PR
TROMP, RM
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 03期
关键词：
D O I：
10.1063/1.101014
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：219 / 221
页数：3
相关论文
共 13 条
[1]   HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE [J].
ASAI, M ;
UEBA, H ;
TATSUYAMA, C .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2577-2583
[2]   STRUCTURAL PERFECTION OF THE SI(111)-(1X1) AS SURFACE [J].
COPEL, M ;
TROMP, RM .
PHYSICAL REVIEW B, 1988, 37 (05) :2766-2769
[3]   SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].
IYER, SS ;
METZGER, RA ;
ALLEN, FG .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5608-5613
[4]  
IYER SS, IN PRESS THIN SOLID
[5]   EPITAXIAL-GROWTH OF GEXSI1-X ON SI - A DIRECT MONTE-CARLO SIMULATION [J].
KOBAYASHI, A ;
DASSARMA, S .
PHYSICAL REVIEW B, 1988, 37 (02) :1039-1042
[6]  
MENENDEZ J, IN PRESS J VAC SCI T
[7]   STRUCTURALLY INDUCED OPTICAL-TRANSITIONS IN GE-SI SUPERLATTICES [J].
PEARSALL, TP ;
BEVK, J ;
FELDMAN, LC ;
BONAR, JM ;
MANNAERTS, JP ;
OURMAZD, A .
PHYSICAL REVIEW LETTERS, 1987, 58 (07) :729-732
[8]   RAMAN-SCATTERING STUDY OF AMORPHOUS SI-GE INTERFACES [J].
PERSANS, PD ;
RUPPERT, AF ;
ABELES, B ;
TIEDJE, T .
PHYSICAL REVIEW B, 1985, 32 (08) :5558-5560
[9]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GEXSI1-X MBE GROWTH ON SI(001) SUBSTRATES [J].
SAKAMOTO, K ;
SAKAMOTO, T ;
NAGAO, S ;
HASHIGUCHI, G ;
KUNIYOSHI, K ;
BANDO, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (05) :666-670
[10]   A NEW UHV SYSTEM FOR CHANNELING BLOCKING ANALYSIS OF SOLID-SURFACES AND INTERFACES [J].
TROMP, RM ;
KERSTEN, HH ;
GRANNEMAN, E ;
SARIS, FW ;
KOUDIJS, R ;
KILSDONK, WJ .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 4 (01) :155-166
12