MOMENTUM MATRIX-ELEMENTS IN III-V SEMICONDUCTOR ALLOYS

被引：11

作者：

MERIAN, M ^{[1
]}

BHATTACHARJEE, AK ^{[1
]}

机构：

[1] UNIV PARIS 11,PHYS SOLIDES LAB,F-91405 ORSAY,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1985年 / 55卷 / 12期

关键词：

D O I：

10.1016/0038-1098(85)90135-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1071 / 1073

页数：3

共 14 条

[1] BAND-STRUCTURE OF SEMICONDUCTOR ALLOYS BEYOND VIRTUAL CRYSTAL APPROXIMATION, EFFECT OF COMPOSITIONAL DISORDER ON ENERGY GAPS IN GAPXAS1-X
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[2] EFFECT OF DISORDER ON CONDUCTION-BAND EFFECTIVE MASS, VALENCE-BAND SPIN-ORBIT SPLITTING, AND DIRECT BAND GAP IN III-V ALLOYS
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WOOLLEY, JC
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[J]. PHYSICAL REVIEW B, 1973, 8 (08): : 3794 - 3798
[3] K.P CALCULATION OF EFFECTIVE MASSES IN ZINC-BLENDE SEMICONDUCTORS
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MAHAN, GD
[J]. PHYSICAL REVIEW, 1969, 185 (03): : 1073 - &
[4] GAMMA-1 CONDUCTION ELECTRON G-FACTOR AND MATRIX-ELEMENTS IN GAAS AND ALXGA1-X AS ALLOYS
CHADI, DJ
CLARK, AH
BURNHAM, RD
[J]. PHYSICAL REVIEW B, 1976, 13 (10): : 4466 - 4469
[5] ELECTRONIC-STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS ALXGA1-XAS,GAPXAS1-X, AND GAXIN1-XP
CHEN, AB
SHER, A
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5360 - 5374
[6] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES
COHEN, ML
BERGSTRESSER, TK
[J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +
[7] K-].P-] PERTURBATION-THEORY IN III-V COMPOUNDS AND ALLOYS - RE-EXAMINATION
HERMANN, C
WEISBUCH, C
[J]. PHYSICAL REVIEW B, 1977, 15 (02): : 823 - 833
[8] HERMANN C, 1984, OPTICAL ORIENTATION, P463
[9] HESS E, 1973, PHYS STATUS SOLIDI B, V55, P187, DOI [10.1002/pssb.2220560254, 10.1002/pssb.2220550118]
[10] CRYSTAL POTENTIAL AND ENERGY BANDS OF SEMICONDUCTORS .3. SELF-CONSISTENT CALCULATIONS FOR SILICON
KLEINMAN, L
PHILLIPS, JC
[J]. PHYSICAL REVIEW, 1960, 118 (05): : 1153 - 1167

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