INVERSION LAYER MOBILITY WITH INTERSUBBAND SCATTERING

被引:30
作者
EZAWA, H [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1016/0039-6028(76)90108-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:25 / 32
页数:8
相关论文
共 12 条
[1]   SURFONS AND ELECTRON-MOBILITY IN SILICON INVERSION LAYERS [J].
EZAWA, H ;
KAWAJI, S ;
NAKAMURA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) :126-155
[2]   PHONONS IN A HALF SPACE [J].
EZAWA, H .
ANNALS OF PHYSICS, 1971, 67 (02) :438-&
[3]   SCATTERING OF ELECTRONS BY LATTICE VIBRATIONS IN NONPOLAR CRYSTALS [J].
HARRISON, WA .
PHYSICAL REVIEW, 1956, 104 (05) :1281-1290
[4]   TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J].
HERRING, C .
BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02) :237-290
[5]  
KAWAJI S, 1969, J PHYS SOC JAPAN, V27, P908
[6]  
KAWAJI S, COMMUNICATION
[7]   SCATTERING OF CONDUCTION ELECTRONS BY LATTICE VIBRATIONS IN SILICON [J].
LONG, D .
PHYSICAL REVIEW, 1960, 120 (06) :2024-2032
[8]   THEORY OF SCATTERING OF ELECTRONS IN A "NONDEGENERATE-SEMICONDUCTOR-SURFACE INVERSION LAYER BY SURFACE-OXIDE CHARGES [J].
NING, TH ;
SAH, CT .
PHYSICAL REVIEW B, 1972, 6 (12) :4605-4613
[9]   SCATTERING OF ELECTRONS BY SURFACE OXIDE CHARGES AND BY LATTICE-VIBRATIONS AT SILICON-SILICON DIOXIDE INTERFACE [J].
SAH, CT ;
TSCHOPP, LL ;
NING, TH .
SURFACE SCIENCE, 1972, 32 (03) :561-&
[10]   SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J].
STERN, F .
PHYSICAL REVIEW B, 1972, 5 (12) :4891-&