VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH ( NEW METHOD GROWTH CATALYSIS FROM IMPURITY WHISKER EPITAXIAL + LARGE CRYSTALS SI E )

被引：5942

作者：

WAGNER, RS

ELLIS, WC

机构：

来源：

关键词：

D O I：

10.1063/1.1753975

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：89 / &

共 9 条

[1] BERYLLIUM OXIDE WHISKERS AND PLATELETS [J].

EDWARDS, PL ;

HAPPEL, RJ .

[2]

Frank F. C., 1949, FARADAY SOC, V5, P48

[3] PREPARATION OF SILICON RIBBONS [J].

GREINER, ES ;

ELLIS, WC ;

GUTOWSKI, JA .

[4]

MERZ KM, 1960, SILICON CARBIDE HIGH, P73

[5] EPITAXIAL SILICON FILMS BY THE HYDROGEN REDUCTION OF SIC1 [J].

THEUERER, HC .

[6]

WAGNER R, SUBMITTED FOR PUBLIC

[7]

Wagner R. S., 1963, J MET J MET, V15, P76

[8] MORPHOLOGY AND GROWTH MECHANISM OF SILICON RIBBONS [J].

WAGNER, RS ;

TREUTING, RG .

[9] GROWTH AND DEFECT STRUCTURE OF SAPPHIRE MICROCRYSTALS [J].

WEBB, WW ;

FORGENG, WD .