GAAS-SIXOYNZ MIS FET

被引：23

作者：

MESSICK, L ^{[1
]}

机构：

[1] USN,CTR ELECTR LAB,DIV ELECTR MAT SCI,SAN DIEGO,CA 92152

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 12期

关键词：

D O I：

10.1063/1.322542

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5474 / 5475

页数：2

共 10 条

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[3]

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[7] INP-SIO2 MIS STRUCTURE [J].

MESSICK, L .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) :4949-4951

[8]

MIYAZAKI T, 1973, INT ELECTRON DEVICES, P164

[9] ELECTROLYTIC ETCHING AND ELECTRON-MOBILITY OF GAAS FOR FETS [J].

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[10]

Schwartz B., 1975, Critical Reviews in Solid State Sciences, V5, P609, DOI 10.1080/10408437508243518

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