FLUID MOTION IN THE CZOCHRALSKI METHOD OF CRYSTAL-GROWTH

[1] BIRIKH RV, 1966, J APPL MECH TECH PHY

[2] CARRUTHERS JR, 1968, J APPL PHYS, V39, P205

[3] DIGITAL-SIMULATION OF CZOCHRALSKI BULK FLOW IN A PARAMETER RANGE APPROPRIATE FOR LIQUID SEMICONDUCTORS [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 386 - 399

[4] LANGLOIS WE, 1981, PHYSICO CHEM HYDRODY, V2, P245

[5] Laudise R. A., 1970, GROWTH SINGLE CRYSTA

[6] LEVICH VG, 1962, PHYSICOCHEMICAL HYDR

[7] OSTRACH S, 1979, SPACE RES, V19

[8] OSTRACH S, 1978, PHYSICOCHEMICAL HYDR, V1

[9] CONVECTIVE EFFECTS IN CRYSTALS GROWN FROM MELT [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) : 614 - 646

[10] EXPERIMENTS ON SURFACE-TENSION DRIVEN FLOW IN FLOATING ZONE-MELTING [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 43 (03) : 305 - 312

[1] BIRIKH RV, 1966, J APPL MECH TECH PHY

[2] CARRUTHERS JR, 1968, J APPL PHYS, V39, P205

[3] DIGITAL-SIMULATION OF CZOCHRALSKI BULK FLOW IN A PARAMETER RANGE APPROPRIATE FOR LIQUID SEMICONDUCTORS [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 386 - 399

[4] LANGLOIS WE, 1981, PHYSICO CHEM HYDRODY, V2, P245

[5] Laudise R. A., 1970, GROWTH SINGLE CRYSTA

[6] LEVICH VG, 1962, PHYSICOCHEMICAL HYDR

[7] OSTRACH S, 1979, SPACE RES, V19

[8] OSTRACH S, 1978, PHYSICOCHEMICAL HYDR, V1

[9] CONVECTIVE EFFECTS IN CRYSTALS GROWN FROM MELT [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) : 614 - 646

[10] EXPERIMENTS ON SURFACE-TENSION DRIVEN FLOW IN FLOATING ZONE-MELTING [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 43 (03) : 305 - 312