MEASUREMENTS OF HETEROJUNCTIONS ALLOYED ON TO GAAS

被引：4

作者：

TANSLEY, TL

NEWMAN, PC

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 05期

关键词：

D O I：

10.1016/0038-1101(67)90049-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：497 / &

共 12 条

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[3]

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[5] EFFECT OF CRYSTAL ORIENTATION ON GE-GAAS HETEROJUNCTIONS [J].

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[6]

Newman P. C., 1965, ELECTRON LETT, V1, P265

[7] N-N SEMICONDUCTOR HETEROJUNCTIONS [J].

OLDHAM, WG ;

MILNES, AG .

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[8] INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J].

OLDHAM, WG ;

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[9]

PRICE PJ, 1962, JUL P INT C PHYS SEM, P99

[10] FORWARD BIAS CURRENT-VOLTAGE CHARACTERISTICS FOR A HETEROJUNCTION IN WHICH TUNNELLING DOMINATES [J].

TANSLEY, TL .

PHYSICA STATUS SOLIDI, 1966, 18 (01) :105-&

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