GROWTH OF EPITAXIAL ZNSE FILMS ON SEMICONDUCTIVE SUBSTRATES

被引：0

作者：

IVANOV, VA ^{[1
]}

MURAVEVA, KK ^{[1
]}

KALINKIN, IP ^{[1
]}

机构：

[1] LENINGRAD TECHNOL INST,LENINGRAD,USSR

来源：

INORGANIC MATERIALS | 1976年 / 12卷 / 04期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：535 / 538

页数：4

共 12 条

[1]

ABRIKOSOV NK, 1967, SEMICONDUCTIVE COMPO

[2]

AVEN M, 1967, PHYSICS CHEMISTRY 2

[3]

GALOW JT, 1968, PHYS STAT SOL, V28, P295

[4]

GALOW JT, 1972, THIN SOL FILMS, V9, P409

[5] SWITCHING AND MEMORY CHARACTERISTICS OF ZNSE-GE HETEROJUNCTIONS [J].

HOVEL, HJ ;

URGELL, JJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :5076-&

[6]

IVANOV VA, 1975, IAN SSSR NEORG MATER, V11, P15

[7] ELECTRICAL BEHAVIOR OF PARA GE-N ZNSE HETEROJUNCTIONS [J].

NEWBURY, DM ;

OWEN, SJT ;

KIRK, DL .

ELECTRONICS LETTERS, 1972, 8 (04) :104-&

[8]

PARK YS, 1972, APPL PHYS LETT, V21, P12

[9] LIGHT EMISSION FROM ZNSE-GAAS DIODES [J].

PARKER, SG ;

PINNELL, JE .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :3012-&

[10]

Tolutis V. B., 1967, Litovskii Fizicheskii Sbornik, V7, P805

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