THE ROLE OF VAPOR ETCHING IN THE GROWTH OF EPITAXIAL INP

被引：13

作者：

ASHEN, DJ

ANDERSON, DA

APSLEY, N

EMENY, MT

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 60卷 / 02期

关键词：

D O I：

10.1016/0022-0248(82)90093-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：225 / 234

页数：10

共 17 条

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[8]

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