INITIAL GROWTH OF GAAS ON VICINAL SI(111) SUBSTRATES BY MOLECULAR-BEAM EPITAXY

GaAs grown on vicinal Si(111) substrates by molecular-beam epitaxy showed a phenomenon peculiar to a (111) interface due to bond-matching during the initial growth stage (layer thickness (t), t less than or equal to 200 nm), accompanying the growth of GaAs islands with perfect-crystalline quality. The best full-width at half-maximum of (111) GaAs X-ray diffraction in GaAs layers on vicinal Si(111) tilted by 6 degrees toward the [0 (1) over bar 1] direction was 100 arc.s. at a layer thickness of 200 nm.