STRUCTURAL OPTIMIZATION FOR SINGLE JUNCTION INGAP SOLAR-CELLS

被引：42

作者：

TAKAMOTO, T

IKEDA, E

KURITA, H

OHMORI, M

机构：

[1] Research and Development Division, Central Research Laboratory, Japan Energy Corporation 3-17-35, Saitama, 335, Niizo-minami, Toda-si

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 35卷 / 1-4期

关键词：

D O I：

10.1016/0927-0248(94)90118-X

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

As the first step to develop an InGaP/Si tandem solar cell, we tried to fabricate a high efficiency In0.5Ga0.5P single junction cell on a GaAs substrate by metalorganic chemical vapor deposition method. We optimized the cell structure taking account the minority carrier lifetime. A long minority carrier lifetime of over 10 ns was obtained with improved growth condition, and a maximum conversion efficiency of 17.4% was achieved.

引用

页码：25 / 31

页数：7