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- [23] STUDY OF PARAMETERS OF GAAS-LAYERS GROWN ON SI SUBSTRATES BY THE LIQUID-PHASE EPITAXY TECHNIQUE PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1993, 19 (23): : 45 - 49
- [25] BISTABLE DEFECTS IN GAAS GROWN BY LIQUID-PHASE EPITAXY SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (09): : 1044 - 1045