SILICON-ON-INSULATOR TECHNOLOGY FOR HIGH-TEMPERATURE METAL-OXIDE-SEMICONDUCTOR DEVICES AND CIRCUITS

被引：24
作者：
FLANDRE, D
机构：
[1] Microelectronics Laboratory, Université Catholique de Louvain, B-1348 Louvain-la-Neuve
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 29卷 / 1-3期
关键词：
SILICON-ON-INSULATOR; INTEGRATED CIRCUITS; MOS DEVICES; HIGH-TEMPERATURE OPERATION;
D O I：
10.1016/0921-5107(94)04018-Y
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The high temperature characteristics of devices and circuits realized in complementary metal oxide semiconductor (CMOS) technology on silicon-on-insulator (SOI) substrates are compared with other materials, and it is demonstrated that CMOS on SOI is presently the most suitable process for the realization of electronic circuits operating at up to more than 300 degrees C.
引用
收藏
页码：7 / 12
页数：6
相关论文
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