A COMPARISON BETWEEN DIFFERENT STRUCTURES OF AMORPHOUS-SILICON IMAGE SENSORS

被引：1
|
作者：
SU, YW
HWANG, HL
机构：
[1] Department of Electrical Engineering, National Tsing Hua University, Hsin-chu
来源：
THIN SOLID FILMS | 1991年 / 202卷 / 02期
关键词：
D O I：
10.1016/0040-6090(91)90088-F
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper discusses-contact linear image sensors used as compact scanners for office automation and facsimile transmission. Comparisons are made between several thin film structures, including a Schottky barrier, a p-i junction, a p-i-n junction and a metal/insulator/semiconductor junction. Ratios of photocurrent to dark current as high as 10(5), and photoresponses of 4-5 ms are reported.
引用
收藏
页码：181 / 189
页数：9
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